Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

• Published in: Journal of applied physics Vol. 116; no. 11
• Main Authors: Rourke, Devin, Ahn, Sungmo, Nardes, Alexandre M., van de Lagemaat, Jao, Kopidakis, Nikos, Park, Wounjhang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.09.2014
• Subjects: Absorption spectra; Applied physics; Bulk density; Carrier density; Carrier mobility; Circuits; Computer simulation; Continuity (mathematics); Current carriers; Gratings (spectra); Heterojunction devices; Hole mobility; Holes (electron deficiencies); Mathematical models; Nanostructure; Optical properties; Photoelectric effect; Photoelectric emission; Photonics; Photovoltaic cells; Quantum efficiency; Short circuit currents; Solar cells; Spatial distribution; Thin films
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4896167

The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.