Medium energy Ar+-ion induced ripple formation: Role of ion energy in pattern formation

•Microstructure of 60keV Ar+-ion bombarded ripple patterned silicon surfaces, as revealed by cross-sectional transmission electron microscopy and Raman spectroscopy.•Estimation of energy scaling of parameters which govern the pattern evolution on solid surface by SRIM simulation.•Investigation of ro...

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Bibliographic Details
Published inApplied surface science Vol. 317; pp. 476 - 479
Main Authors Garg, S.K., Datta, D.P., Ghatak, J., Tripathy, S.R., Kanjilal, D., Som, T.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 30.10.2014
Elsevier
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Summary:•Microstructure of 60keV Ar+-ion bombarded ripple patterned silicon surfaces, as revealed by cross-sectional transmission electron microscopy and Raman spectroscopy.•Estimation of energy scaling of parameters which govern the pattern evolution on solid surface by SRIM simulation.•Investigation of role of nuclear and electronic energy deposition of ions on the evolution of ripple patterns.•Identification of nuclear energy loss of ions as the contributing factor for experimentally observed energy scaling of ripple wavelength as well as thickness of ion-induced amorphous layer. We show that the energy scaling of the ion beam induced depth of amorphization and ripple wavelength in the medium energy regime can be understood in terms of dominant nuclear energy loss in this energy regime. Specifically, thickness of amorphous layer developed under 60keV Ar+-ion bombardment of Si at an incidence angle of 60° as determined by micro-Raman Spectrometry and cross-sectional transmission electron microscopy is shown to be consistent with the assumption of only nuclear energy loss mediated evolution. Further, the variation of ripple wavelength with ion energy is estimated using SRIM. Estimated variation of ripple wavelength with ion energy under this assumption is found to be in qualitative agreement with experimental observations in the medium energy range.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2014.08.128