SCATTERING RATES IN A SEMICONDUCTOR HETEROSTRUCTURE: A VARIATIONAL WAVEFUNCTION APPROACH

We calculate the conduction electron scattering rates in a model for a semiconductor heterostructure (SH) of nanometric dimensions. Electron interaction with polar optical phonons (POP) is considered by applying POP modes analyzed in previous papers. The SH is modeled as a two interfaces slab, one o...

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Bibliographic Details
Published inInternational journal of modern physics. B, Condensed matter physics, statistical physics, applied physics Vol. 14; no. 10; pp. 1067 - 1073
Main Authors GONDAR, J. L., COMAS, F., CASTRO, F.
Format Journal Article
LanguageEnglish
Published World Scientific Publishing Company 20.04.2000
Subjects
semiconductor nanostructures
scattering rates
electron–phonon interactions
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Summary:We calculate the conduction electron scattering rates in a model for a semiconductor heterostructure (SH) of nanometric dimensions. Electron interaction with polar optical phonons (POP) is considered by applying POP modes analyzed in previous papers. The SH is modeled as a two interfaces slab, one of them mechanically free and the other one an interface with a semi infinite semiconductor. Only intraband electron transitions within the first subband are studied and a variational approach is introduced for the electron wavefunction. Comparisons with previous works on the subject are made.
ISSN:0217-9792
1793-6578
DOI:10.1142/S0217979200001527