Scattering Rates in a Semiconductor Heterostructure: The Electron–Phonon Coupling
We investigate Scattering-Rates due to the electron–phonon interaction in a Semiconductor Heterostructure (SH) on the basis of a phenomenological theory for Polar Optical Phonons (POP) in semiconductor nanostructures which was proposed in the latter times. The applied theory has led to a plausible d...
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| Published in | International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics Vol. 12; no. 16n17; pp. 1719 - 1728 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
World Scientific Publishing Company
10.07.1998
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| Online Access | Get full text |
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| Summary: | We investigate Scattering-Rates due to the
electron–phonon interaction in a Semiconductor Heterostructure
(SH) on the basis of a phenomenological theory for Polar Optical
Phonons (POP) in semiconductor nanostructures which was proposed in
the latter times. The applied theory has led to a plausible description
of POP in Quantum-Wells, Quantum-Wires and
Quantum-Dots. Using this theory we find an explicit expression
for the electron–phonon Hamiltonian with direct application to a
SH. Scattering Rates are calculated by applying this Hamiltonian and
also a realistic wave-function for the electron states (using
Airy functions) is considered. The obtained results are discussed in
detail and compared with previous works on the subject. |
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| ISSN: | 0217-9792 1793-6578 |
| DOI: | 10.1142/S0217979298000946 |