Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 47; no. 6; pp. 2682 - 2689
Main Authors Niu, G., Cressler, J.D., Shoga, M., Jobe, K., Chu, P., Harame, D.L.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Charge
Chemical vapor deposition
Circuit simulation
Collection
Computational modeling
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Medical simulation
Microelectronics
Microwave technology
Silicon germanides
Silicon germanium
Simulation
Space technology
Strikes
Online AccessGet full text

Cover

More Information
Summary:This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
ISSN:0018-9499
1558-1578
DOI:10.1109/23.903826