A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

• Published in: Journal of applied physics Vol. 110; no. 2; pp. 024507 - 024507-7
• Main Authors: Yüksel, Ö. F., Kuş, M., Şimşir, N., Şafak, H., Şahin, M., Yenel, E.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 15.07.2011
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3610394

The current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device have been investigated at a wide temperature range between 75 and 300 K in detail. The measured current-voltage (I-V) characteristics of the device show a good rectification behavior at all temperatures. The electronic parameters such as the ideality factor and the barrier height are determined from the experimental data using standard current-voltage analysis method and also temperature dependence of these parameters is analyzed. In addition to the standard analysis, using the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the device, and a good agreement is obtained between relevant diode parameters. It was observed that Au/PMI/n-Si Schottky diodes exhibit space charge limited (SCL) conduction at all temperatures. Therefore, we have analyzed this SCL current mechanism in more detail. From this analysis, several electronic parameters related with the SCL mechanism are determined, and it is found that Poole-Frenkel effect is dominant in reverse bias.