Helium Implantation Effects on Retention Behavior of Hydrogen Isotopes in Oxygen-Contained Boron Films

• Published in: Fusion science and technology Vol. 52; no. 4; pp. 870 - 874
• Main Authors: Yoshikawa, A., Oya, Y., Miyauchi, H., Nakahata, T., Nishikawa, Y., Suda, T., Igarashi, E., Oyaidzu, M., Tokitani, M., Iwakiri, H., Yoshida, N., Okuno, K.
• Format: Journal Article
• Language: English
• Published: Taylor & Francis 01.11.2007
• ISSN: 1536-1055; 1943-7641
• DOI: 10.13182/FST07-A1602

He + implantation effects on the Retention behavior of hydrogen isotopes implanted into 35% oxygen-contained boron film was studied by means of SEM, AFM, XPS and TDS. It was found that the D retention for only D 2 + implanted film was the highest and it decreased for pre-He + implanted film and post-He + implanted film. From the SEM and AFM images, the surface morphology of the oxygen-contained boron film was partly cracked, indicating that B 2 O 3 was formed in the film. From the TDS and XPS results, the defective structure and the formation of B-D-B bond, B-D bond and B-O-D bond were observed by He + and D 2 + implantation, respectively. It was suggested that oxygen was trapped as B-O bond. The reaction with implanted D 2 + was preceded in different mechanism.