Improvement of parameters of micro-pixel avalanche photodiodes

Abstract The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of...

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Published inJournal of instrumentation Vol. 17; no. 7; p. P07021
Main Authors Sadigov, A.Z., Ahmadov, F.I., Sadygov, Z.Y., Ahmadov, G.S., Berikov, D., Holik, M., Mammadli, A., Akbarov, R.A., Nuruyev, S.M., Ajdarli, K., Garibli, A., Doganci, E., Mora, Y., Yilmaz, E.
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.2022
Subjects
Avalanche diodes
Breakdown
Electric potential
Parameters
Photodiodes
Photomultiplier tubes
Photon counters
Pixels
Scintillation counters
Voltage
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Summary:Abstract The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/17/07/P07021