Improvement of parameters of micro-pixel avalanche photodiodes
Abstract The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of...
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Published in | Journal of instrumentation Vol. 17; no. 7; p. P07021 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.07.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Abstract
The paper is concerned with the parameter study of a new
generation of micro-pixel avalanche photodiodes (MAPD) with deeply
buried pixel structure, also named silicon photomultipliers (SiPM)
or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM
was manufactured in the frame of collaboration with Zecotek
Company. Measurements were carried out and discussed in terms of the
important parameters such as the current-voltage and
capacitance-voltage characteristic, gain, the temperature
coefficient of breakdown voltage, breakdown voltage, and gamma-ray
detection performance using an LFS scintillator. The obtained
results showed that the newly developed MAPD-3NM photodiode
outperformed the previous generation in most parameters and can be
successfully applied in space application, medicine, high-energy
physics, and security. New proposals are also discussed, for further
improvement of the parameters of the MAPD photodiodes that will be
produced in the coming years. |
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ISSN: | 1748-0221 1748-0221 |
DOI: | 10.1088/1748-0221/17/07/P07021 |