Fabrication and Characterization of Cu–B4C Metal Matrix Composite by Powder Metallurgy: Effect of B4C on Microstructure, Mechanical Properties and Electrical Conductivity

Boron carbide-reinforced copper metal matrix composites have been the subject of broad research because of their good mechanical, electrical and tribological properties. In the present research, Cu–B 4 C composites containing 5, 10 and 15 wt% of B 4 C have been fabricated by cold powder compaction f...

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Published inTransactions of the Indian Institute of Metals Vol. 72; no. 3; pp. 673 - 684
Main Authors Prajapati, P. K., Chaira, D.
Format Journal Article
LanguageEnglish
Published New Delhi Springer India 01.03.2019
Springer Nature B.V
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Summary:Boron carbide-reinforced copper metal matrix composites have been the subject of broad research because of their good mechanical, electrical and tribological properties. In the present research, Cu–B 4 C composites containing 5, 10 and 15 wt% of B 4 C have been fabricated by cold powder compaction followed by conventional sintering at 900 °C for 1 h under argon atmosphere. The fabricated composites are characterized by X-ray diffraction, optical microscopy and field emission scanning electron microscopy (FESEM). From microscopic study, we have found that B 4 C particles are homogeneously distributed in the copper matrix and there is good compatibility between B 4 C and Cu. The microstructure analyzed by FESEM shows that the interface between Cu matrix and B 4 C is clean and no interfacial product is formed. The effect of B 4 C particles and their weight fraction on microstructure, mechanical properties and electrical conductivity is also studied. The Vickers hardness value increases with increasing weight percentage of boron carbide in Cu matrix. The hardness value increases from 38 VHN for pure copper to 79 VHN for Cu-15 wt% B 4 C metal matrix composite (MMC). A maximum relative density of 82% is achieved for Cu-5 wt% B 4 C MMC. The maximum compressive strength of 315 MPa is achieved for Cu-15 wt% B 4 C MMC. The electrical conductivity of pure Cu is found to be 4.5 × 10 6  S/m, and it decreases to 1.92 × 10 6 , 0.75 × 10 6 and 0.32 × 10 6  S/m for Cu-5 wt% B 4 C, Cu-10 wt% B 4 C and Cu-15 wt% B 4 C MMCs, respectively.
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ISSN:0972-2815
0975-1645
DOI:10.1007/s12666-018-1518-2