Vacancies and adatoms complexes on silicon surface

• Published in: Applied surface science Vol. 172; no. 3; pp. 351 - 355
• Main Authors: Guo, Hansheng, Souda, R.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2001; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Ni-induced reconstruction; Physics; Scanning tunneling microscopy; Silicon surface; Structure of solids and liquids; crystallography; 61.16.C; Scanning tunneling microscopy; Ni-induced reconstruction; Silicon surface; 61.72.T; Surface reconstruction; Ion implantation; Nickel ions; Structure modification; Silicon; Crystal faces; Experimental study; Transition elements Ions; Vacancy impurity pair; STM; Surface structure
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(00)00872-2

By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces. Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)–2× n structure, which are partially different from those of the reported up to now. Heterogeneous reconstruction has been also observed on Si(1 1 1) surface: the 7×7 terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and give our primary exploration to their formation mechanism.