Evidence for photon anti-bunching in acoustically pumped dots

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 42; no. 10; pp. 2497 - 2500
• Main Authors: Couto, O.D.D., Lazić, S., Iikawa, F., Stotz, J.A.H., Jahn, U., Hey, R., Santos, P.V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2010; Elsevier
• Subjects: Acoustic transport; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dots; Quantum wells; Quantum wires; Single photon emitters; Surface acoustic waves; Surface acoustic waves; Single photon emitters; Acoustic transport; Quantum wires; Gallium arsenides; Electronic conductivity; Quantum dots; Quantum wells; Acoustic surface waves; III-V compound; Molecular beam epitaxy; Nanostructured materials; III-V semiconductors
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.11.028

We demonstrate the controlled transfer of photoexcited carriers by a surface acoustic wave (SAW) between coupled quantum wells, wires, and dots grown on a semiconductor surface. The quantum wires and dots used in the experiments are embedded at photolithographically defined positions within an (Al,Ga)As/GaAs (311)A-oriented quantum well grown by molecular beam epitaxy. We give experimental evidence for the anti-bunching of photons emitted in a quantum dot pumped by electrons and holes transported from the quantum well by a surface acoustic wave.