Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

• Published in: Diamond and related materials Vol. 14; no. 3-7; pp. 350 - 354
• Main Authors: BARON, C, WADE, M, DENEUVILLE, A, BUSTARRET, E, KOCINIEVSKI, T, CHEVALIER, J, UZAN-SAGUY, C, KALISH, R, BUTLER, J
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.03.2005
• Subjects: Cathodoluminescence, ionoluminescence; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Homoepitaxy; Inorganic compounds; Microwave radiation; CVD diamond; Diamonds; Doping; Radiative recombination; Excitons and defects; Crystal growth from vapors; Cathodoluminescence; Experimental study; Hydrogenation; Post-hydrogenation; Thin films; CVD; Boron additions; Bound exciton; PECVD; Defect formation
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2005.01.009