Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although i...

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Bibliographic Details
Published inChinese physics B Vol. 26; no. 11; pp. 210 - 215
Main Author 梁锋;赵德刚;江德生;刘宗顺;朱建军;陈平;杨静;刘炜;李翔;刘双韬;邢瑶;张立群;李沫;张健
Format Journal Article
LanguageEnglish
Published 01.11.2017
Subjects
GaN
光学损耗
性能
斜率效率
波导
激光二极管
蓝色LD
铟含量
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/11/114203

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Summary:Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In（0.05） Ga（0.95）N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.
Bibliography:Feng Liang1,2, De-Gang Zhao1,3,De-Sheng Jiang1, Zong-Shun Liu1, Jian-Jun Zhu1, Ping Chen1, Jing Yang1, Wei Liu1, Xiang Li1, Shuang-Tao Liu1, Yao Xing1, Li-Qun Zhang4, Mo Li5, Jian Zhang5（ 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China ; 2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China; 3 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China ; 4 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China ;5 Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China）
GaN-based laser diode slope efficiency waveguide
Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In（0.05） Ga（0.95）N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/11/114203