Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 12; pp. 507 - 513
Main Author 张立忠 王源 何燕冬
Format Journal Article
LanguageEnglish
Published 01.12.2016
Subjects
二极管
互补金属氧化物半导体
传输线脉冲
可控硅整流器
放电行为
结构测试
触发电压
静电放电
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Summary:The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
Bibliography:electrostatic discharge （ESD）, diode-triggered silicon controlled rectifier （DTSCR）, transmission-line-pulsing （TLP）, mathematical modeling
Li-Zhong Zhang, Yuan Wang, and Yan-Dong He（ Key Laboratory of Microelectronic Devices and Circuits （Ministry of Education） Institute of Microelectronics, Peking University, Beijing 100871, China）
11-5639/O4
The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/12/128501