Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this...
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Published in | Chinese physics B Vol. 25; no. 12; pp. 507 - 513 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.12.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR. |
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Bibliography: | electrostatic discharge (ESD), diode-triggered silicon controlled rectifier (DTSCR), transmission-line-pulsing (TLP), mathematical modeling Li-Zhong Zhang, Yuan Wang, and Yan-Dong He( Key Laboratory of Microelectronic Devices and Circuits (Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China) 11-5639/O4 The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR. |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/25/12/128501 |