Performance analysis of all optical NOR gate at 80 Gb/s

In this paper an aall optical NOR gatea based on four wave mixing in Semiconductor Optical Amplifier is proposed. The performance of this NOR gate is good and satisfactory up to 100 Gbit/s. The extinction ratio and the maximum output power are optimized by appropriate choice of design parameters of...

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Bibliographic Details
Published inOptik (Stuttgart) Vol. 124; no. 13; pp. 1672 - 1675
Main Authors Mehra, Rekha, Jaiswal, Shikha, Dixit, H.K., Singh, Pallavi
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Design engineering
Design parameters
Extinction
Gates
Semiconductor optical amplifiers
Time domain analysis
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Summary:In this paper an aall optical NOR gatea based on four wave mixing in Semiconductor Optical Amplifier is proposed. The performance of this NOR gate is good and satisfactory up to 100 Gbit/s. The extinction ratio and the maximum output power are optimized by appropriate choice of design parameters of SOA and the maximum extinction ratio 10.8 for this design has been obtained at 80 Gbit/s. Unlike the related research papers referred, this paper highlights both power level and time domain analysis of the proposed NOR gate.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0030-4026
DOI:10.1016/j.ijleo.2012.05.008