Properties of CuInSe2 films obtained by methods of selenization and quasi-equilibrium deposition

The CuInSe 2 films obtained by selenization and quasi-equilibrium deposition are investigated by elemental, X-ray phase, and chemical analyses. Temperature dependences of electric parameters are determined and photoelectric measurements are performed. It is shown that high-quality p -type films can...

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Published inInorganic materials Vol. 44; no. 12; pp. 1295 - 1299
Main Authors Gadzhiev, T. M., Babaev, A. A., Gadzhieva, R. M., Magomedova, Dzh. Kh, Khokhlachev, P. P.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.12.2008
Subjects
CADMIUM SULFIDE
Cadmium sulfides
CHEMICAL ANALYSIS
Chemistry
Chemistry and Materials Science
COPPER INDIUM SELENIDE
DEPOSITION
Dispersions
EQUILIBRIUM
Grains
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Inorganic materials
Materials Science
Photoelectricity
SULFIDES
X RAYS
CuInSe
Equilibrium Deposition
Free Path Length
Photovoltaic Converter
Chalcopyrite Structure
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Summary:The CuInSe 2 films obtained by selenization and quasi-equilibrium deposition are investigated by elemental, X-ray phase, and chemical analyses. Temperature dependences of electric parameters are determined and photoelectric measurements are performed. It is shown that high-quality p -type films can be obtained by both methods. More uniform n -type films are obtained by selenization at lower temperatures. The strongest photoresponse was observed for the CuInSe 2 /CdS structures deposited under quasi-equilibrium conditions. Dispersion and sizes of polycrystalline grains are studied.
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ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168508120066