In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane

• Published in: Journal of the Electrochemical Society Vol. 143; no. 5; pp. 1654 - 1661
• Main Authors: GANZ, M, DORVAL, N, LEFEBVRE, M, PEALAT, M, LOUMAGNE, F, LANGLAIS, F
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 01.05.1996
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Raman spectra; Inorganic compounds; Semiconductor materials; Thermal decomposition; In situ; Silicon carbides; Binary compounds; Organic silane; Computerized simulation; Crystal growth from vapors; Experimental study; Precursor; CVD; Optical method; Antistokes lines; Gaseous phase reaction