In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 143; no. 5; pp. 1654 - 1661
Main Authors GANZ, M, DORVAL, N, LEFEBVRE, M, PEALAT, M, LOUMAGNE, F, LANGLAIS, F
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.05.1996
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Raman spectra
Inorganic compounds
Semiconductor materials
Thermal decomposition
In situ
Silicon carbides
Binary compounds
Organic silane
Computerized simulation
Crystal growth from vapors
Experimental study
Precursor
CVD
Optical method
Antistokes lines
Gaseous phase reaction
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1836694