Novel AlInN/GaN integrated circuits operating up to 500°C

• Published in: Solid-state electronics Vol. 113; pp. 22 - 27
• Main Authors: Gaska, R., Gaevski, M., Jain, R., Deng, J., Islam, M., Simin, G., Shur, M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2015
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2015.05.007

High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500°C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach t provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-K passivation/gate dielectrics enable high temperature operation. The feasibility of the developed technology was confirmed by fabrication and testing of the high temperature inverter and differential amplifier ICs using AlInN/GaN heterostructures. The developed ICs showed stable performance with unit-gain bandwidth above 1MHz and internal response time 45ns at temperatures as high as 500°C.