Range of Er ions in amorphous Si

• Published in: Applied surface science Vol. 253; no. 2; pp. 937 - 943
• Main Authors: Liu, J., Lennard, W.N., Lee, J.-K.
• Format: Journal Article
• Language: English
• Published: 15.11.2006
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.01.031

We have measured the range and range straggling for energetic 100-900 keV Er ions in amorphous Si by means of Rutherford backscattering followed by spectrum analysis. The results are compared with other experimental data and Monte Carlo (SRIM-2003) calculations. Our experimental results show that, although the measured values for both range and range straggling exceed the SRIM predictions, they are nevertheless consistent with trends that have been previously observed. We see no anomalous trends in range and range straggling parameters for the rare earth ions for implant energies E > or = 100 keV. We present a detailed consideration of 4He stopping powers in Si due to its crucial impact on RBS range measurements.