Generation of interface states and oxide charges in n-MOS structures due to high electric field

Saved in:
Bibliographic Details
Published inSolid-state electronics Vol. 32; no. 10; pp. 919 - 921
Main Authors Tolpadi, Amita, Srivastava, R.S.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.1989
Elsevier Science
Subjects
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
MOS structure
Silicon
Voltage current curve
Experimental study
Interface electron state
Online AccessGet full text

Cover

More Information
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(89)90072-5