Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating
The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate...
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| Published in | Chinese physics B Vol. 25; no. 12; pp. 294 - 299 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/12/124209 |
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| Abstract | The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. |
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| AbstractList | The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. |
| Author | 李凯丽 安俊明 张家顺 王玥 王亮亮 李建光 吴远大 尹小杰 胡雄伟 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Author_xml | – sequence: 1 fullname: 李凯丽 安俊明 张家顺 王玥 王亮亮 李建光 吴远大 尹小杰 胡雄伟 |
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| Cites_doi | 10.1109/JSTQE.2009.2039680 10.1109/LPT.2014.2303793 10.1364/OE.22.031899 10.1364/OE.22.009395 10.1364/OE.20.00B493 10.1088/0256-307X/25/5/053 10.1109/GROUP4.2011.6053710 10.1109/50.212529 10.1109/JLT.2004.834471 10.1109/JSTQE.2006.884088 10.1364/OE.18.005106 |
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| Notes | The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. SOI, nanowire AWG, crosstalk, phase errors Kai-Li Li, Jun-Ming An, Jia-Shun Zhang, Yue Wang, Liang-Liang Wang, Jian-Guang Li, Yuan-Da Wu, Xiao-Jie Yin, and Xiong-Wei Hu（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China） 11-5639/O4 |
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| References | 11 12 13 14 15 16 Yuan P (8) 2015; 36 An J M (4) 2008; 25 1 Wu W K (5) 2015; 36 6 7 Wu W K (3) 2015; 36 9 Xie B Q (2) 2016; 25 10 |
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| Snippet | The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method.... |
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| SubjectTerms | 串扰分析 传递函数法 影响因素 深紫外光刻 硅纳米线 等离子体刻蚀 绝缘体上硅 阵列波导光栅 |
| Title | Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating |
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