Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate...

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Published inChinese physics B Vol. 25; no. 12; pp. 294 - 299
Main Author 李凯丽 安俊明 张家顺 王玥 王亮亮 李建光 吴远大 尹小杰 胡雄伟
Format Journal Article
LanguageEnglish
Published 01.12.2016
Subjects
串扰分析
传递函数法
影响因素
深紫外光刻
硅纳米线
等离子体刻蚀
绝缘体上硅
阵列波导光栅
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/12/124209

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Summary:The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.
Bibliography:The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.
SOI, nanowire AWG, crosstalk, phase errors
Kai-Li Li, Jun-Ming An, Jia-Shun Zhang, Yue Wang, Liang-Liang Wang, Jian-Guang Li, Yuan-Da Wu, Xiao-Jie Yin, and Xiong-Wei Hu（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/12/124209