Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) ~qth positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method t...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 12; pp. 163 - 166
Main Author 刘飞 周东 陆海 陈敦军 任芳芳 张荣 郑有炓
Format Journal Article
LanguageEnglish
Published 01.12.2015
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Summary:We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) ~qth positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
Bibliography:11-1959/O4
We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) ~qth positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
LIU Fei, ZHOU Dong, LU Hai, CHEN Dun-Jun, REN Fang-Fang, ZHANG Rong, ZHENG You-Dou(1.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; 2 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093)
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/12/128501