Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures
Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared...
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| Published in | Chinese physics letters Vol. 34; no. 12; pp. 75 - 78 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2017
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| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/34/12/128501 |
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| Abstract | Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃. |
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| AbstractList | Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃. |
| Author | 张力;张金风;张苇杭;张涛;徐雷;张进成;郝跃 |
| AuthorAffiliation | Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University,Xi＇an 710071 |
| Author_xml | – sequence: 1 fullname: 张力;张金风;张苇杭;张涛;徐雷;张进成;郝跃 |
| BookMark | eNqFkU1LAzEQhoMoWKt_QRbvsclmNxvBixQ_Cq2KVvC2zGZn28huokn20H_v1hYPXoSBYZj3mcMzJ-TQOouEnHN2yZlSE5bmkgpWvE9ENuHpUCpn_ICMeJFxKvKMHZLRb-iYnITwwRjnivMR2by4qg8xeUbfON-B1Zi4Jrlp7-GRTtdgLbbJAiO0dGZD30J0nr5iZ7Szda-HKXkwqzW9bVFH7yxduMq0Jm6SpQcbTBgSIYH4k0qW2H2ih9h7DKfkqIE24Nm-j8nb3e1y-kDnT_ez6c2c6lSlkapCKV0zgDrLs4ILWYNOEbUqdCYUImhZ5MNGSSYVv6quctlUKfAG6yYXlRBjcr27q70LwWNTahMhGmejB9OWnJVbjeXWULk1VIqs5Gm50zjg8g_-6U0HfvM_eLEH186uvoxd_ZJyeEyRyrwQ37imhp8 |
| CitedBy_id | crossref_primary_10_1002_aelm_202400069 crossref_primary_10_3390_mi15111343 |
| Cites_doi | 10.1126/science.1183226 %%{\bf 327} 60 10.1109/16.906451 10.1143/APEX.1.011101 %%{\bf 1} 011101 10.1016/0375-9601(72)90984-X 10.1063/1.1461420 10.1063/1.4959179 10.1063/1.1290449 10.1016/j.sse.2006.04.041 10.1088/1009-1963/15/5/032 10.1109/TED.2004.835025 10.1016/j.sse.2010.05.026 10.1063/1.1400779 10.1063/1.2996281 10.1088/0256-307X/30/2/028503 10.1109/TED.2008.2006891 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION |
| DOI | 10.1088/0256-307X/34/12/128501 |
| DatabaseName | 中文科技期刊数据库 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures |
| EISSN | 1741-3540 |
| EndPage | 78 |
| ExternalDocumentID | 10_1088_0256_307X_34_12_128501 674172657 |
| GroupedDBID | 02O 042 1JI 1PV 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CEBXE CJUJL CQIGP CRLBU CS3 EBS EDWGO EJD EMSAF EPQRW EQZZN FEDTE HAK HVGLF IHE IJHAN IOP IZVLO JCGBZ KNG KOT LAP M45 N5L N9A NS0 NT- NT. P2P PJBAE Q02 R4D RIN RNS RO9 ROL RPA RW3 S3P SY9 T37 UCJ W28 XPP ~02 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- TGP U1G U5K |
| ID | FETCH-LOGICAL-c282t-8788cd0aad4547136dac2eec87c438eeac6755478606819b956fb2a1fedf53b33 |
| ISSN | 0256-307X |
| IngestDate | Tue Jul 01 01:35:32 EDT 2025 Thu Apr 24 22:56:52 EDT 2025 Wed Feb 14 09:55:21 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 12 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c282t-8788cd0aad4547136dac2eec87c438eeac6755478606819b956fb2a1fedf53b33 |
| Notes | 11-1959/O4 Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃. Li Zhang, Jin-Feng Zhang, Wei-Hang Zhang, Tao Zhang, Lei Xu, Jin-Cheng Zhang, Yue Hao（ Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi＇an 710071） |
| PageCount | 4 |
| ParticipantIDs | crossref_citationtrail_10_1088_0256_307X_34_12_128501 crossref_primary_10_1088_0256_307X_34_12_128501 chongqing_primary_674172657 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2017-12-01 |
| PublicationDateYYYYMMDD | 2017-12-01 |
| PublicationDate_xml | – month: 12 year: 2017 text: 2017-12-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics letters |
| PublicationTitleAlternate | Chinese Physics Letters |
| PublicationYear | 2017 |
| References | 12 13 Levinshtein M E (11) 2008 15 Chu F T (2) 2013; 30 Quan S (3) 2013; 30 16 Li X D (5) 2015; 32 17 18 19 Wang Y (4) 2011; 28 Zhang K (1) 2013; 22 6 7 Zhang J F (14) 2006; 15 8 9 20 10 |
| References_xml | – ident: 13 doi: 10.1126/science.1183226 %%{\bf 327} 60 – ident: 19 doi: 10.1109/16.906451 – volume: 22 issn: 1674-1056 year: 2013 ident: 1 publication-title: Chin. Phys. – ident: 6 doi: 10.1143/APEX.1.011101 %%{\bf 1} 011101 – volume: 32 issn: 0256-307X year: 2015 ident: 5 publication-title: Chin. Phys. Lett. – ident: 7 doi: 10.1016/0375-9601(72)90984-X – ident: 9 doi: 10.1063/1.1461420 – ident: 15 doi: 10.1063/1.4959179 – volume: 28 issn: 0256-307X year: 2011 ident: 4 publication-title: Chin. Phys. Lett. – ident: 10 doi: 10.1063/1.1290449 – ident: 17 doi: 10.1016/j.sse.2006.04.041 – volume: 15 start-page: 1060 issn: 1674-1056 year: 2006 ident: 14 publication-title: Chin. Phys. doi: 10.1088/1009-1963/15/5/032 – ident: 20 doi: 10.1109/TED.2004.835025 – ident: 8 doi: 10.1016/j.sse.2010.05.026 – ident: 12 doi: 10.1063/1.1400779 – volume: 30 issn: 0256-307X year: 2013 ident: 2 publication-title: Chin. Phys. Lett. – year: 2008 ident: 11 publication-title: Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe – ident: 16 doi: 10.1063/1.2996281 – volume: 30 issn: 0256-307X year: 2013 ident: 3 publication-title: Chin. Phys. Lett. doi: 10.1088/0256-307X/30/2/028503 – ident: 18 doi: 10.1109/TED.2008.2006891 |
| SSID | ssj0011811 |
| Score | 2.148634 |
| Snippet | Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated... |
| SourceID | crossref chongqing |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 75 |
| Title | Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures |
| URI | http://lib.cqvip.com/qk/84212X/201712/674172657.html |
| Volume | 34 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3db9MwELe2ISReEJ-iDFAe5idk2sSxYz8mXcaGxEDQSX2L8uGMhymBNX0Yfz13dpqlMFXAS2T5fGcnd_X97J7PhBzxqMpN7fssr4RkIZcVy_1aMj8ygptZWYW5zfZ5Lk8vwg9LsdzbPxpFLa274l35885zJf-jVagDveIp2X_Q7CAUKqAM-oUnaBief6XjL22xXnUYxT4E_yOwvHqfnzM8NtDYsFWA1-wMQ85xfc2-YjR822Ca1_bahnmwtL8Kh31sbajsjUt5bhOIrPC0I7Z6uzCAsF0G5tUY0tI0pImi8TFNBdUJTaAQUaVprLGgZ1RJJCUnNE5oKqmKaSxoekKTOdUxTRVVwOUjSQM16tnVEGRruec0nmEBuKETnowqNTJpHwsxpyrdplrxKBXEH-Mwt6iSJnIkMMXxghx8j-h3OfAG2r2BwmZIha45ikUqjJqPN1HAMd8GpLi5FpAfbsMtnVt0vgDAFsNtsbGz6Hde-x9FMJr63QUwPYhw1xL94Z5gSreZPPrOoMxD3DoJ7EOJfkjbCcAljCMKpIj2yb0AFkPofs4-fR7-KwOMZu-F3EjdnINXajrUTXk49YOp6wPTiHxrm8sfAI5GcGyEqxaPyMN-QeTFzrofkz3TPCH3bWByuXpKbpyNeyMb99ra27Jxb6eNe3fbuDeycS_vbCtvbOPPyMVJupifsv66EFYGKujArytVVrM8rzBJnQ_TTl4GxpQqKkOuDCAMWBxj-jpYswMOLrSQdRHAzGSqWvCC8-fkoGkb84J4oQhKaKdkDaKE5kUtVSFq45s88kvtT8jh8AWz7y4tTDboaULE5ptmZZ9pHy98ucpsxIdSGeolQ71kPMz8IHN6mZDpwLcRupvj5c5xHJIHt7b-ihx012vzGiB0V7yxFvQLG5ihRQ |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Robust+Performance+of+AlGaN-Channel+Metal-Insulator-Semiconductor+High-Electron-Mobility+Transistors+at+High+Temperatures&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86%E5%BF%AB%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%BC%A0%E5%8A%9B%3B%E5%BC%A0%E9%87%91%E9%A3%8E%3B%E5%BC%A0%E8%8B%87%E6%9D%AD%3B%E5%BC%A0%E6%B6%9B%3B%E5%BE%90%E9%9B%B7%3B%E5%BC%A0%E8%BF%9B%E6%88%90%3B%E9%83%9D%E8%B7%83&rft.date=2017-12-01&rft.issn=0256-307X&rft.eissn=1741-3540&rft.volume=34&rft.issue=12&rft.spage=75&rft.epage=78&rft_id=info:doi/10.1088%2F0256-307X%2F34%2F12%2F128501&rft.externalDocID=674172657 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F84212X%2F84212X.jpg |