Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures
Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared...
Saved in:
| Published in | Chinese physics letters Vol. 34; no. 12; pp. 75 - 78 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2017
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃. |
|---|---|
| Bibliography: | 11-1959/O4 Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃. Li Zhang, Jin-Feng Zhang, Wei-Hang Zhang, Tao Zhang, Lei Xu, Jin-Cheng Zhang, Yue Hao（ Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi＇an 710071） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/34/12/128501 |