Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors

The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-exc...

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Published inChinese physics letters Vol. 33; no. 10; pp. 103 - 106
Main Author 孙庆灵 王禄 江洋 马紫光 王文奇 孙令 王文新 贾海强 周均铭 陈弘
Format Journal Article
LanguageEnglish
Published 01.10.2016
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Summary:The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei~cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
Bibliography:11-1959/O4
The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei~cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/10/106801