Effect of a high-low junction on solar cell emitter recombination current

A two-port analysis of a high-low junction is used to determine whether an additional low doped layer under highly doped emitter can be advantageous in suppressing emitter recombination current in a HLE solar cell. A computer analysis of effective recombination velocity at the high-low junction as a...

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Bibliographic Details
Published inSolid-state electronics Vol. 30; no. 3; pp. 289 - 293
Main Authors Furlan, Jože, Amon, Slavko, Smole, Franci, Klopčič, Zvone
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.03.1987
Elsevier Science
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar thermal conversion
Solar cell
Recombination
Silicon
Solar energy
Computer aided analysis
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Summary:A two-port analysis of a high-low junction is used to determine whether an additional low doped layer under highly doped emitter can be advantageous in suppressing emitter recombination current in a HLE solar cell. A computer analysis of effective recombination velocity at the high-low junction as a function of emitter profile for various values of top surface recombination velocities shows that a high-low emitter solar cell structure generally is not better than the typical surface passivated BSF solar cell.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(87)90186-9