Irreversible and reversible changes in band gap and volume of chalcogenide films

Irreversible and reversible changes induced by illumination and/or annealing of thin evaporatively deposited Ge-As-S films at normal incidence are studied. Attention is paid to the volume (thickness) changes and their correlation with the changes induced in the band gap of the ternary and binary cha...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 326-327; pp. 243 - 247
Main Authors Vateva, E., Arsova, D., Skordeva, E., Pamukchieva, V.
Format Journal Article
LanguageEnglish
Published 01.10.2003
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Summary:Irreversible and reversible changes induced by illumination and/or annealing of thin evaporatively deposited Ge-As-S films at normal incidence are studied. Attention is paid to the volume (thickness) changes and their correlation with the changes induced in the band gap of the ternary and binary chalcogenides. The revealed dependences are compared to that obtained for obliquely deposited chalcogenide films and substantial differences have been found. 17 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0022-3093
DOI:10.1016/S0022-3093(03)00400-9