Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^...
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| Published in | Chinese physics B Vol. 26; no. 11; pp. 264 - 268 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2017
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| Subjects | |
| Online Access | Get full text |
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| Summary: | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage. |
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| Bibliography: | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage. complementary metal-oxide-semiconductor（CMOS） active pixel sensor dark current fixedpattern noise quantum efficiency Lindong Ma1,2,3, Yudong Li1,2, Qi Guo1,2, Lin Wen1,2, Dong Zhou1,2, Jie Feng1,2, Yuan Liu1,2,3, Junzhe Zeng1,2,3, Xiang Zhang1,2,3, Tianhui Wang1,2,3（ 1 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences Xinjiang Technical Institute of Physics ＆ Chemistry, Urumqi 830011, China ; 2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China ; 3 University of Chinese Academy of Sciences, Beijing 100190, China） 11-5639/O4 |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/26/11/114212 |