The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the...

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Published inChinese physics B Vol. 26; no. 10; pp. 411 - 416
Main Author 刘双韬 赵德刚 杨静 江德生 梁锋 陈平 朱建军 刘宗顺 李翔 刘炜 邢瑶 张立群
Format Journal Article
LanguageEnglish
Published 01.10.2017
Subjects
MOCVD
p-GaN
低温生长
残余
氮化镓材料
浓度控制
金属有机化学气相沉积
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/10/107102

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Summary:In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration： （i） the C concentration decreases with the increase of growth pressure; （ii） we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; （iii） annealing outside of metal-organic chemical vapor deposition （MOCVD） could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.
Bibliography:Shuang-Tao Liu1, De-Gang Zhao1,2, Jing Yang1, De-Sheng Jiang1, Feng Liang1, Ping Chen1, Jian-Jun Zhu1, Zong-Shun Liu1, Xiang Li1, Wei Liu1, Yao Xing1, Li-Qun Zhang3（1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ;2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China ;3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China）
In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration： （i） the C concentration decreases with the increase of growth pressure; （ii） we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; （iii） annealing outside of metal-organic chemical vapor deposition （MOCVD） could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.
nitride materials, p-GaN, C concentration
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/10/107102