Thin copper films deposited by low temperature plasma-enhanced metal organic chemical vapour deposition using copper-acetylacetonate

Plasma-enhanced metal organic chemical vapour deposition of thin copper films at low substrate temperatures using copper-acetylacetonate is investigated for deposition on temperature-sensitive substrates. Films with electrical resistivity near bulk values, a smooth surface and good adhesion quality...

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Bibliographic Details
Published inSurface & coatings technology Vol. 59; no. 1; pp. 212 - 216
Main Authors Hamerich, A., Lottermoser, L., Müller, J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 01.10.1993
Elsevier
Subjects
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings; film growth and epitaxy
Physics
CVD
Characterization
Thin films
Plasma
Transition elements
Organometallic compounds
PECVD
Copper
Experimental study
Adhesion
Electric conductivity
Crystal growth methods
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Summary:Plasma-enhanced metal organic chemical vapour deposition of thin copper films at low substrate temperatures using copper-acetylacetonate is investigated for deposition on temperature-sensitive substrates. Films with electrical resistivity near bulk values, a smooth surface and good adhesion quality were deposited at substrate temperatures down to 80°C. Control of the film quality by optical emission spectroscopy of the process plasma was investigated.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(93)90085-3