Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells（QWs） cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually r...

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Published inChinese physics B Vol. 25; no. 11; pp. 114 - 118
Main Author 吴海燕 马紫光 江洋 王禄 杨浩军 李阳锋 左朋 贾海强 王文新 周钧铭 刘伍明 陈弘
Format Journal Article
LanguageEnglish
Published 01.11.2016
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Summary:A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells（QWs） cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels,owing to quantum confinement,and cannot form a photocurrent.We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent,indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs.We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions.Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors.
Bibliography:11-5639/O4
A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells（QWs） cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels,owing to quantum confinement,and cannot form a photocurrent.We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent,indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs.We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions.Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors.
electricity junction tunneling confinement photovoltaic escape prospect challenges relax thick
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/11/117803