Kinetics of exciton formation and relaxation in GaAs

Exciton-polariton photoluminescence kinetics under short-pulse excitation in nominally undoped GaAs has been investigated. A delayed onset revealing energy relaxation of electrons and polaritons has been observed. Energy relaxation speeds up with an increase in impurity concentration and depends on...

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Bibliographic Details
Published inJournal of luminescence Vol. 53; no. 1-6; pp. 423 - 426
Main Authors Aaviksoo, J., Reimand, I., Rossin, V.V., Travnikov, V.V.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.1992
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Exciton-polariton photoluminescence kinetics under short-pulse excitation in nominally undoped GaAs has been investigated. A delayed onset revealing energy relaxation of electrons and polaritons has been observed. Energy relaxation speeds up with an increase in impurity concentration and depends on the type of conductivity. At high repetition rate the next excitation pulse causes a fast quenching of polariton luminescence in the vicinity of exciton resonance due to heating of excitons by photoexcited hot electrons.
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(92)90189-G