Electron mobilities in MOVPE-grown ZnSe quantum wells

• Published in: Journal of crystal growth Vol. 159; no. 1-4; pp. 410 - 413
• Main Authors: Drechsler, M., Hofmann, D.M., Volm, D., Stadler, W., Steude, G., Meyer, B.K., Taudt, W., Söllner, J., Heuken, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1996; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Physics; Zinc sulfides; Inorganic compounds; Selenides sulfides; Ternary compounds; Quantum wells; Cyclotron resonance; Transition element compounds; Photoluminescence; Binary compounds; Zinc selenides; MOVPE; Experimental study; II-VI semiconductors; Carrier mobility; Energy transfer
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(95)00733-4

We studied ZnSe single quantum wells with well widths from 4 to 1 nm by optically detected cyclotron resonance (ODCR). In the samples grown by metal organic vapour phase epitaxy, where the residual shallow donor concentration is still of the order of mid 1016 cm−3, we find maximum electron mobilities of 46 000 cm2/V·s at low temperatures. The mechanism causing the cyclotron resonances to be observed in the luminescence is dominantly an energy transfer by heating the crystal lattice.