InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field

• Published in: Physica status solidi. C Vol. 9; no. 2; pp. 389 - 392
• Main Authors: Li, Rui, Lu, Yeqing, Chae, Soo Doo, Zhou, Guangle, Liu, Qingmin, Chen, Chen, Shahriar Rahman, M., Vasen, Tim, Zhang, Qin, Fay, Patrick, Kosel, Tom, Wistey, Mark, Xing, Huili (Grace), Koswatta, Siyuranga, Seabaugh, Alan
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2012; WILEY‐VCH Verlag
• Subjects: GaSb; heterojunction; InAs; TFET; tunnel FET; tunneling
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201100241

The first fabrication of a III‐V tunnel field‐effect transistor (TFET) with tunneling directed perpendicular to the gate is reported. This new transistor geometry utilizes an InAs/Al0.45Ga0.55Sb staggered‐gap tunnel junction intended for high on current and steep subthreshold swing. The first measurements of the transistor transport properties at room temperature and ‐50 °C are provided. Tunneling transport is confirmed by the observation of negative differential resistance in the tunnel junction in the forward bias polarity. Transistor on‐current of 21 μA/μm at 0.3 V and subthreshold swing of 830 mV/decade is found. The large subthreshold swing is consistent with the large density of interface traps at the oxide/semiconductor interface (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)