Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers

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Bibliographic Details
Published inJournal of crystal growth Vol. 236; no. 1-3; pp. 95 - 100
Main Authors MIN HONG KIM, YOONHO CHOI, JAE HYUNG YI, MIN YANG, JINA JEON, SEONGWON KHYM, LEEM, Shi-Jong
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.03.2002
Subjects
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Deposition technology
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Inorganic compounds
Selective area
Gallium nitrides
Crystal growth from vapors
Chemical etching
Experimental study
Lateral growth
MOCVD
Heat treatments
Thin films
CVD
Stress relaxation
Selective growth
Silicon oxides
Low pressure
Masking
Overlayers
III-V semiconductors
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)02197-2