A mathematical model for deep ion implantation depth profiling by synchrotron radiation grazing-incidence X-ray fluorescence spectrometry

Synchrotron based grazing incidence X-ray fluorescence (GIXRF) spectrometry is usually applied to obtain shallow depth distributions (less than 25 nm) using information from the X-ray standing wave (XSW). In this paper a new XSW-free mathematical model is proposed that allows the quantitative deriva...

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Bibliographic Details
Published inJournal of analytical atomic spectrometry Vol. 35; no. 12; pp. 2964 - 2973
Main Authors Czyzycki, Mateusz, Kokkoris, Mike, Karydas, Andreas-Germanos
Format Journal Article
LanguageEnglish
Published London Royal Society of Chemistry 08.12.2020
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Summary:Synchrotron based grazing incidence X-ray fluorescence (GIXRF) spectrometry is usually applied to obtain shallow depth distributions (less than 25 nm) using information from the X-ray standing wave (XSW). In this paper a new XSW-free mathematical model is proposed that allows the quantitative derivation of much deeper depth distributions. The model was validated with three test Si(111) wafers deeply implanted with 200 keV argon ions of nominal doses of 10 15 to 10 16 at. per cm 2 . Ar ion retained doses determined with our XSW-free GIXRF model agreed well with nominal quantities, additionally cross-checked by ion beam analysis (IBA) techniques. Deduced depth profiles of Ar ions are critically discussed in comparison with the Monte Carlo simulation of Ar ion transport in amorphous silicon. The developed model provides a robust quantification GIXRF methodology to study deeply implanted dopants in semiconductors, expanding the applicability of GIXRF spectrometry in new fields with emerging technological interest. Grazing-incidence X-ray fluorescence is applied to obtain shallow depth distributions using the X-ray standing wave (XSW). A new XSW-free mathematical model is proposed that allows the quantitative derivation of much deeper depth distributions.
ISSN:0267-9477
1364-5544
DOI:10.1039/d0ja00346h