Van der Waals integration of phase-pure 2D perovskite sheets and GaAs nanowires for self-driven photodetector

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 12; no. 37; pp. 15232 - 15238
• Main Authors: Zhang, Zhi-Hong, Hou, Xiao-Bing, Li, Shang-Heng, Wei, Zhi-Peng, Wei, Jin-Chao, Li, Peng, Wang, Shuang-Peng
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 26.09.2024
• Subjects: Dark current; Heterostructures; Nanowires; Near infrared radiation; Optoelectronic devices; Perovskites; Semiconductor materials
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/d4tc02994a

Semiconductor heterostructures hold significant importance for exploring novel functional optoelectronic devices, but the chemical instability and soft lattice framework of perovskites significantly hinder the efficient heterogeneous integration with other perovskite or semiconductor materials. Herein, based on the large-area phase-pure 2D perovskite sheets, a BA 2 MA 2 Pb 3 I 10 /GaAs van der Waals (vdW) heterostructure has been successfully constructed. The favorable vdW contacts allow the device to be cut-off at forward bias with a remarkably low dark current of 1.94 pA. This endows the heterostructure device with excellent detection performance, achieving a linear dynamic range of 80.9 dB and a detectivity of 6.17 × 10 10 Jones. Additionally, the interfacial potential of the heterostructure enables the device to operate in a self-driven manner across broad spectral ranges from ultraviolet to near-infrared. Our study demonstrates efficient vdW integration based on perovskite and provides a new foundation for constructing perovskite vdW heterostructures. Direct and non-destructive transfer of large-area phase-pure two-dimensional perovskite nanosheets for the construction of van der Waals heterostructures.