Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed...

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Bibliographic Details
Published inLithuanian journal of physics Vol. 54; no. 1; pp. 58 - 62
Main Authors Penot, A., Torres, J., Nouvel, P., Varani, L., Teppe, F., Consejo, C., Dyakonova, N., Knap, W., Cordier, Y., Chenot, S., Chmielowska, M., Shiktorov, Pavel, Starikov, Evgenij, Gružinskis, Viktoras
Format Journal Article
LanguageEnglish
Published Lietuvos mokslų akademija 01.01.2014
Subjects
Electronics
Engineering Sciences
plasma waves
terahertz radiation emission
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Summary:We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed in emission spectra. A threshold behaviour of the resonance with respect to applied voltage takes place. By using the proposed analytical model the measured/observed experimentally resonant behaviour of emission spectra is interpreted as a result of ungated stream-plasma instability in the channel.
ISSN:1648-8504
2424-3647
DOI:10.3952/physics.v54i1.2848