Efficiency enhancement of dopant-free perovskite solar cells by employing fluoro-substituted electron donor-electron acceptor type polymeric hole-transporting materials
For the conventional n-i-p perovskite solar cells (PVSCs), dopant-free hole-transporting polymers can be employed to achieve high device performances. Herein, two electron donor-electron acceptor (D-A) type conjugated polymers PBCz-BTz and PBCz-FBTz were developed, in which benzodithiophene served a...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 11; no. 45; pp. 15848 - 15854 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
23.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | For the conventional n-i-p perovskite solar cells (PVSCs), dopant-free hole-transporting polymers can be employed to achieve high device performances. Herein, two electron donor-electron acceptor (D-A) type conjugated polymers
PBCz-BTz
and
PBCz-FBTz
were developed, in which benzodithiophene served as the D unit, and benzotriazole without or with fluoro-substituents was used as the A unit.
PBCz-FBTz
with fluoro-substituents exhibits a better π-π stacking effect, suitable energy levels, higher backbone planarity and hole mobility to
PBCz-BTz
. Thus, the champion device based on
PBCz-FBTz
exhibits an outstanding power conversion efficiency of 20.71% and retains over 90% of its original PCE after being stored under ambient conditions for 30 days. Our work confirms that developing novel polymeric HTMs with fluoro-substituents is a promising molecular design strategy for highly efficient PVSCs.
PBCz-FBTz
with fluoro-substituents exhibits superior hole transport properties and passivation effects to
PBCz-BTz
. The devices employing
PBCz-FBTz
as dopant-free hole-transporting material show a champion PCE of 20.71% with excellent stability. |
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Bibliography: | https://doi.org/10.1039/d3tc03097k Electronic supplementary information (ESI) available. See DOI |
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d3tc03097k |