Efficiency enhancement of dopant-free perovskite solar cells by employing fluoro-substituted electron donor-electron acceptor type polymeric hole-transporting materials

For the conventional n-i-p perovskite solar cells (PVSCs), dopant-free hole-transporting polymers can be employed to achieve high device performances. Herein, two electron donor-electron acceptor (D-A) type conjugated polymers PBCz-BTz and PBCz-FBTz were developed, in which benzodithiophene served a...

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Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 11; no. 45; pp. 15848 - 15854
Main Authors Chen, Yunxiang, Wang, Xuelin, You, Guofeng, Huang, Simei, Zhen, Hongyu
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 23.11.2023
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Summary:For the conventional n-i-p perovskite solar cells (PVSCs), dopant-free hole-transporting polymers can be employed to achieve high device performances. Herein, two electron donor-electron acceptor (D-A) type conjugated polymers PBCz-BTz and PBCz-FBTz were developed, in which benzodithiophene served as the D unit, and benzotriazole without or with fluoro-substituents was used as the A unit. PBCz-FBTz with fluoro-substituents exhibits a better π-π stacking effect, suitable energy levels, higher backbone planarity and hole mobility to PBCz-BTz . Thus, the champion device based on PBCz-FBTz exhibits an outstanding power conversion efficiency of 20.71% and retains over 90% of its original PCE after being stored under ambient conditions for 30 days. Our work confirms that developing novel polymeric HTMs with fluoro-substituents is a promising molecular design strategy for highly efficient PVSCs. PBCz-FBTz with fluoro-substituents exhibits superior hole transport properties and passivation effects to PBCz-BTz . The devices employing PBCz-FBTz as dopant-free hole-transporting material show a champion PCE of 20.71% with excellent stability.
Bibliography:https://doi.org/10.1039/d3tc03097k
Electronic supplementary information (ESI) available. See DOI
ISSN:2050-7526
2050-7534
DOI:10.1039/d3tc03097k