Toward narrowband emission: the chemical strategies for modifying boron-based luminescent materials
Organic light-emitting diodes (OLEDs) with high-definition displays require narrowband emission from each pixel. Recently, boron-based thermally activated delayed fluorescence (TADF) emitters have gained broad attention in the OLED research field. They can effectively utilize both singlet and triple...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 11; no. 34; pp. 11425 - 11439 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
31.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Organic light-emitting diodes (OLEDs) with high-definition displays require narrowband emission from each pixel. Recently, boron-based thermally activated delayed fluorescence (TADF) emitters have gained broad attention in the OLED research field. They can effectively utilize both singlet and triplet excitons for electroluminescence, resulting in a small full width of half maximum (FWHM). The fused nitrogen/boron (N/B) system, known as the multi-resonance TADF (MR-TADF) system, has been making rapid progress. In this review, we summarize the current research progress in both traditional and MR-type boron derivatives with TADF characteristics from a molecular construction perspective. We discuss the molecular design strategy involved in maintaining high device efficiency and simultaneously achieving a narrowband emission profile. This review aims to provide insight and guidance for future developments for improving the stability, color purity, and performance of boron-based materials.
In this graphic, the molecular design strategy for achieving high efficiency and maintaining a narrowband emission profile of boron-based thermally activated delayed fluorescence emitters is comprehensively summarized. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d3tc00065f |