Phase homogeneity mediated charge-carrier balance in two-step-method halide perovskite photovoltaics

The multi-scale chemical phase heterogeneity of halide perovskites seriously affects the physical functional integrity of semiconductors and the performance of photovoltaic devices. However, the phase homogeneity in two-step-method perovskites (TSPs) has rarely been investigated. Here, we elaborate...

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Published inEnergy & environmental science Vol. 18; no. 3; pp. 131 - 1319
Main Authors Qu, Duo, Shang, Chuanzhen, Yang, Xiaoyu, Wang, Chenyun, Zhou, Bin, Qin, Qichao, Gao, Lei, Qiao, Jingyuan, Guo, Qiang, Yang, Wenqiang, Wang, Kai, Zhu, Rui, Tu, Yongguang, Huang, Wei
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 04.02.2025
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Summary:The multi-scale chemical phase heterogeneity of halide perovskites seriously affects the physical functional integrity of semiconductors and the performance of photovoltaic devices. However, the phase homogeneity in two-step-method perovskites (TSPs) has rarely been investigated. Here, we elaborate on the severe heterogeneity of the FAMA-based TSP film and found that residual PbI 2 crystallites and Pb 0 species accumulate at the top while a Cl/MA-rich interface is present at the bottom, impeding carrier nonequilibrium transport in the vertical direction. The homogeneity of the TSP film is reinforced by chemical tailoring with 4-methoxyphenethyl ammonium chloride, thus achieving superior structural stability and a charge carrier balance dynamic process. The target TSP p-i-n device achieves a recorded power conversion efficiency of 25.12% under 1-sun illumination (certified at 24.01%). This study uncovers the hidden physicochemical properties of the TSP film, guiding the understanding of microscopic homogeneity and functional integrity and the design of efficient two-step-method inverted perovskite solar cells. Phase homogeneity mediated charge-carrier balance reveals the heterogeneity issue of two-step-method perovskite films.
Bibliography:https://doi.org/10.1039/d4ee04419c
Electronic supplementary information (ESI) available. See DOI
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ISSN:1754-5692
1754-5706
DOI:10.1039/d4ee04419c