Ka-band single-pole double-throw MMIC switch using low-loss GaAs PIN diode

• Published in: Electronics & communications in Japan. Part 2, Electronics Vol. 83; no. 8; pp. 27 - 32
• Main Author: Takasu, Hideki
• Format: Journal Article
• Language: English
• Published: New York John Wiley & Sons, Inc 01.08.2000
• Subjects: GaAs; monolithic microwave integrated circuit; PIN diode; switch
• ISSN: 8756-663X; 1520-6432
• DOI: 10.1002/1520-6432(200008)83:8<27::AID-ECJB4>3.0.CO;2-T

To realize low‐insertion‐loss and high‐power‐handling GaAs PIN diode monolithic microwave integrated circuit (MMIC) switches in the millimeter‐wave region, a new switching device having characteristics of higher switching cutoff frequency and higher breakdown voltage is required in the place of conventional switching devices such as metal semiconductor field effect transistor (MESFET) and pseudomorphic HEMT. In this paper, equivalent circuits of the developed GaAs PIN diode and their detailed performance are first presented, and the requirements for realizing the GaAs PIN diode having the characteristics of lower insertion loss and high breakdown voltage in the millimeter‐wave region are described. The design and performance of a millimeter‐wave MMIC switch using the GaAs PIN diode are then described. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(8): 27–32, 2000