Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scatter...
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| Published in | Chinese physics letters Vol. 33; no. 8; pp. 109 - 112 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge＇s empirical relationship, while the noise level is significantly lower than that predicted by Hooge＇s model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. |
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| AbstractList | Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge＇s empirical relationship, while the noise level is significantly lower than that predicted by Hooge＇s model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. |
| Author | 张浩 宋志军 冯军雅 姬忠庆 吕力 |
| AuthorAffiliation | Department of Physics, Northwest University, Xi＇an 710069 Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Author_xml | – sequence: 1 fullname: 张浩 宋志军 冯军雅 姬忠庆 吕力 |
| BookMark | eNqFkE1rwkAQhpdioWr7EwpL76m72Xxs6KlYtYLYHiz0FiabiW6Ju7obEf99k1Y89NLTywvzzDDPgPSMNUjIPWePnEk5YmGcBIKlnyMhRm2VqWDhFenzNOKBiCPWI_3LzA0ZeP_FGOeS8z7ZL-wxmDrcH9CoE11a7ZFqQ2fQIF0dDBR1m3Zna7vWCmo6N_5QQ2MdXYKxR-2QTjXWJZ1stffaGrpyYLz23YhBcLTZIH3RDhR9t9o0t-S6gtrj3TmH5GM6WY1fg8XbbD5-XgQqlKwJqopjWSYVqjKCGDgriyzMilDJCBTHVMRZKKtQAmARK4aYyJIjpFUJIm1hMSTx717lrPcOq3zn9BbcKecs77zlnZO8c5ILkbf1x1vLPf3hlG6gaT9rHOj6X_rhTG-sWe-1WV_OJkmWJiwRifgG-pWEIQ |
| CitedBy_id | crossref_primary_10_1063_1_5123554 crossref_primary_10_1063_5_0144474 |
| Cites_doi | 10.1103/PhysRevB.82.081305 10.1103/PhysRevLett.109.066803 10.1038/nphys1274 10.1063/1.3480424 10.1038/nmat2609 10.1109/16.333808 10.1103/PhysRevLett.95.146802 10.1021/acsnano.5b00102 10.1063/1.2206685 10.1038/nphys1861 10.1126/science.1189792 10.1038/nature08916 10.1038/srep08452 10.1103/PhysRevB.75.121306 10.1103/RevModPhys.82.3045 10.1103/PhysRevB.84.233101 10.1063/1.3516160 10.1021/nl500822g 10.1021/nl402150r 10.1021/nn102861d 10.1016/j.ssc.2014.10.021 10.1103/PhysRevLett.105.176602 10.1038/nnano.2013.144 10.1103/PhysRevLett.105.076801 10.1038/nphys1270 10.1103/PhysRevB.83.165440 10.1103/PhysRevB.83.245438 10.1038/ncomms1586 10.1063/1.4813850 10.1038/nphys1689 10.1038/ncomms1771 10.1021/acsnano.5b06163 10.1016/0378-4363(76)90089-9 10.1103/PhysRevLett.98.106803 10.1038/srep05817 10.1103/PhysRevLett.106.196801 10.1103/PhysRevB.81.205407 10.1038/srep01212 10.1038/ncomms8634 10.1038/nphys2286 10.1103/RevModPhys.53.497 10.1103/PhysRevB.85.045415 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION |
| DOI | 10.1088/0256-307X/33/8/087302 |
| DatabaseName | 维普_期刊 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point |
| EISSN | 1741-3540 |
| EndPage | 112 |
| ExternalDocumentID | 10_1088_0256_307X_33_8_087302 669760636 |
| GroupedDBID | 02O 042 1JI 1PV 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CEBXE CJUJL CQIGP CRLBU CS3 EBS EDWGO EJD EMSAF EPQRW EQZZN FEDTE HAK HVGLF IHE IJHAN IOP IZVLO JCGBZ KNG KOT LAP M45 N5L N9A NS0 NT- NT. P2P PJBAE Q02 R4D RIN RNS RO9 ROL RPA RW3 S3P SY9 T37 UCJ W28 XPP ~02 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- TGP U1G U5K |
| ID | FETCH-LOGICAL-c280t-ff1edd6fecd4a5a10db929b2c84ac1e735928f28aaeb5c0ee68d1ea7fda37ff13 |
| ISSN | 0256-307X |
| IngestDate | Tue Jul 01 01:35:29 EDT 2025 Thu Apr 24 23:04:15 EDT 2025 Wed Feb 14 10:16:54 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c280t-ff1edd6fecd4a5a10db929b2c84ac1e735928f28aaeb5c0ee68d1ea7fda37ff13 |
| Notes | 11-1959/O4 Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge＇s empirical relationship, while the noise level is significantly lower than that predicted by Hooge＇s model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. |
| PageCount | 4 |
| ParticipantIDs | crossref_primary_10_1088_0256_307X_33_8_087302 crossref_citationtrail_10_1088_0256_307X_33_8_087302 chongqing_primary_669760636 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2016-08-01 |
| PublicationDateYYYYMMDD | 2016-08-01 |
| PublicationDate_xml | – month: 08 year: 2016 text: 2016-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics letters |
| PublicationTitleAlternate | Chinese Physics Letters |
| PublicationYear | 2016 |
| References | 23 24 25 26 27 28 29 Tian M L (36) 2013; 3 30 31 10 32 11 33 12 34 13 35 14 15 16 38 17 39 18 19 1 2 3 4 5 6 7 8 Peng H (37) 2010; 9 9 Wang H C (22) 2014; 4 40 41 20 42 21 |
| References_xml | – ident: 16 doi: 10.1103/PhysRevB.82.081305 – ident: 35 doi: 10.1103/PhysRevLett.109.066803 – ident: 13 doi: 10.1038/nphys1274 – ident: 12 doi: 10.1063/1.3480424 – volume: 9 start-page: 225 year: 2010 ident: 37 publication-title: Nat. Mater. doi: 10.1038/nmat2609 – ident: 42 doi: 10.1109/16.333808 – ident: 3 doi: 10.1103/PhysRevLett.95.146802 – ident: 25 doi: 10.1021/acsnano.5b00102 – ident: 8 doi: 10.1063/1.2206685 – ident: 31 doi: 10.1038/nphys1861 – ident: 33 doi: 10.1126/science.1189792 – ident: 1 doi: 10.1038/nature08916 – ident: 24 doi: 10.1038/srep08452 – ident: 5 doi: 10.1103/PhysRevB.75.121306 – ident: 2 doi: 10.1103/RevModPhys.82.3045 – ident: 20 doi: 10.1103/PhysRevB.84.233101 – ident: 26 doi: 10.1063/1.3516160 – ident: 38 doi: 10.1021/nl500822g – ident: 10 doi: 10.1021/nl402150r – ident: 7 doi: 10.1021/nn102861d – ident: 18 doi: 10.1016/j.ssc.2014.10.021 – ident: 23 doi: 10.1103/PhysRevLett.105.176602 – ident: 6 doi: 10.1038/nnano.2013.144 – ident: 17 doi: 10.1103/PhysRevLett.105.076801 – ident: 14 doi: 10.1038/nphys1270 – ident: 30 doi: 10.1103/PhysRevB.83.165440 – ident: 28 doi: 10.1103/PhysRevB.83.245438 – ident: 34 doi: 10.1038/ncomms1586 – ident: 11 doi: 10.1063/1.4813850 – ident: 15 doi: 10.1038/nphys1689 – ident: 27 doi: 10.1038/ncomms1771 – ident: 9 doi: 10.1021/acsnano.5b06163 – ident: 41 doi: 10.1016/0378-4363(76)90089-9 – ident: 4 doi: 10.1103/PhysRevLett.98.106803 – volume: 4 start-page: 5817 year: 2014 ident: 22 publication-title: Sci. Rep. doi: 10.1038/srep05817 – ident: 19 doi: 10.1103/PhysRevLett.106.196801 – ident: 32 doi: 10.1103/PhysRevB.81.205407 – volume: 3 start-page: 1212 year: 2013 ident: 36 publication-title: Sci. Rep. doi: 10.1038/srep01212 – ident: 39 doi: 10.1038/ncomms8634 – ident: 21 doi: 10.1038/nphys2286 – ident: 40 doi: 10.1103/RevModPhys.53.497 – ident: 29 doi: 10.1103/PhysRevB.85.045415 |
| SSID | ssj0011811 |
| Score | 2.1123877 |
| Snippet | Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited... |
| SourceID | crossref chongqing |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 109 |
| SubjectTerms | 低频噪声 可调 场发射 拓扑 晶体管 狄拉克 纳米线 绝缘体 |
| Title | Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point |
| URI | http://lib.cqvip.com/qk/84212X/201608/669760636.html |
| Volume | 33 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaWIiQuiKdYCsgHfIrSzdOxj86SqCBUethKe4sSx4GVUJa2u0LwW_kxzDiPTQWqgEs0sTMTK_NpPJ6Mx4S8KStZ1bBic73KcDcyYeWKWDZu4gVGVyaohbYJsmf89CJ6v47Xs9nPSdbSfled6B9_3FfyP1qFNtAr7pL9B82OQqEBaNAvXEHDcP0rHX_YfnPzqy4Z-rtztt1c2xIgGBFzVvtuV9SqOwXB6uIdJp7jKhuN6harFDs5ZrA5GWgbw2ZdrXNbOcRpscQPuqVgFUvtnG837Y04Pssilgqm3rIsZjJlKRAJE5IpiYT0mODYleZMpSzjTCimYpblLF0yqVgmmAAuH7sk9CY9uxiTay33kikPH0ljEOxgk8qQsZMsEyTgRTJ1ekrlYxPLJF5F3PElTC2HEXmWUPCc7YPRytjyKeCYhkJ8PibiDRYT_DcMpq27ya2z6OAyuRjcmoBZTCy278nJ5O93Od2_zStgi20Jjl4-0BgIz22jACMZHKbTMcmRc3D1wAPkd8jdABYxdnvpx_PxHxf4VvY8x0HosL9MiMXYtgjDBdzaV2D1j8_b9tMl-DQTL2riDq0ekgf9OoaqDpSPyMy0j8k9m0-sr5-QyxvQpBaadNNShCbtoUkn0KQjNOkATWqhSQdo0gM0KUKTAjSphSa10HxKLvJstTx1-9M9XB0Ib-c2jW_qmjdG11EZl75XV-CqV4EWUal9k4SxDEQTiLI0Vaw9Y7iofVMmTV2GCTCHz8hRu23Nc0Ixk6QJZI11uqLASCEbXePaxWgeVpGek-PxyxVfuyouxaieOYmGb1novjA-ns_ypbAJGkIUqI4C1VGEYQG3Vh1zcjKyDTJvZXhx6yiOyf0DpF-So93V3rwCf3dXvbaw-QUaJY2H |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Low-Frequency+Noise+in+Gate+Tunable+Topological+Insulator+Nanowire+Field+Emission+Transistor+near+the+Dirac+Point&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86%E5%BF%AB%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%BC%A0%E6%B5%A9+%E5%AE%8B%E5%BF%97%E5%86%9B+%E5%86%AF%E5%86%9B%E9%9B%85+%E5%A7%AC%E5%BF%A0%E5%BA%86+%E5%90%95%E5%8A%9B&rft.date=2016-08-01&rft.issn=0256-307X&rft.eissn=1741-3540&rft.issue=8&rft.spage=109&rft.epage=112&rft_id=info:doi/10.1088%2F0256-307X%2F33%2F8%2F087302&rft.externalDocID=669760636 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F84212X%2F84212X.jpg |