Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scatter...
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| Published in | Chinese physics letters Vol. 33; no. 8; pp. 109 - 112 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2016
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| Subjects | |
| Online Access | Get full text |
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| Summary: | Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge＇s empirical relationship, while the noise level is significantly lower than that predicted by Hooge＇s model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. |
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| Bibliography: | 11-1959/O4 Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge＇s empirical relationship, while the noise level is significantly lower than that predicted by Hooge＇s model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator. |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/33/8/087302 |