The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence

InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice fro...

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Published inChinese physics letters Vol. 34; no. 7; pp. 224 - 227
Main Author 齐维靖 徐龙权 莫春兰 王小兰 丁杰 王光绪 潘拴 张建立 吴小明 刘军林 江风益
Format Journal Article
LanguageEnglish
Published 01.06.2017
Subjects
InGaN
Si衬底
二次离子质谱仪
温度依赖性
生长温度
电致发光
绿色发光
超晶格
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/7/077301

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Summary:InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
Bibliography:InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
11-1959/O4
Wei-Jing Qi,Long-Quan Xu, Chun-Lan Mo, Xiao-Lan Wang, Jie Ding, Guang-Xu Wang, Shuan Pan, Jian-Li Zhang, Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang（ National Institute of LED on Si Substrate, Nanchang University, Nanchang 330047）
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/7/077301