Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is foun...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 26; no. 1; pp. 498 - 502
Main Author 李翔 赵德刚 江德生 杨静 陈平 刘宗顺 朱建军 刘炜 何晓光 李晓静 梁锋 刘建平 张立群 杨辉 张源涛 杜国同 龙衡 李沫
Format Journal Article
LanguageEnglish
Published 2017
Subjects
InGaN/GaN
发光
多量子阱
定位效应
温度依赖性
温度诱导
金属有机化学气相沉积
阱宽
Online AccessGet full text

Cover

More Information
Summary:Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Bibliography:Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Xiang Li1,De-Gang Zhao1,2,De-Sheng Jiang1,Jing Yang1,Ping Chen1,Zong-Shun Liu1,Jian-Jun Zhu1,Wei Liu1,Xiao-Guang He1,Xiao-Jing Li1,Feng Liang1,Jian-Ping Liu3,Li-Qun Zhang3,Hui Yang1,3,Yuan-Tao Zhang4,Guo-Tong Du4,Heng Long5,Mo Li5（ 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; 4.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China; 5. Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China）
11-5639/O4
InGaN/GaN multiple quantum wells; localization effect; well thickness
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/017805