Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling a...

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Bibliographic Details
Published inChinese physics letters Vol. 33; no. 9; pp. 128 - 131
Main Author 金秋雪 刘波 刘燕 王维维 汪恒 许震 高丹 王青 夏洋洋 宋志棠 封松林
Format Journal Article
LanguageEnglish
Published 01.09.2016
Subjects
三维有限元模型
三维模拟
器件结构
复位操作
建模方法
片型
相变
随机存取存储器
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Summary:An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.
Bibliography:11-1959/O4
Qiu-Xue Jin1,2, Bo Liu1, Yah Liu1, Wei-Wei Wang1,2, Heng Wang1,2, Zhen Xu1,2, Dan Gao1,2, Qing Wang1,2, Yang-Yang Xia1,2, Zhi-Tang Song1, Song-Lin Feng1（1 State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2 University of Chinese Academy of Sciences, Beijing 100049）
An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/9/098502