Graphene/Mo2C heterostructure directly grown by chemical vapor deposition
Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition(CVD). The composition and structure o...
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Published in | Chinese physics B Vol. 26; no. 6; pp. 444 - 448 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.06.2017
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Online Access | Get full text |
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Summary: | Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition(CVD). The composition and structure of the heterostructure are characterized through energydispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices. |
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Bibliography: | graphene/Mo2C heterostructure, CVD, methane flow rate, superconductivity Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition(CVD). The composition and structure of the heterostructure are characterized through energydispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices. Rongxuan Deng1,2, Haoran Zhang1,2, Yanhui Zhang1, Zhiying Chen1, Yanping Sui1, Xiaoming Ge1,2, Yijian Liang1,2, Shike Hu1,2, Guanghui Yu1, Da Jiang1(1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ;2 University of Chinese Academy of Sciences, Beijing 100049, China) 11-5639/O4 |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/26/6/067901 |